FigureAsia 35 Under 35 · Science
Huihui Zhu
Age 33 · Tin-perovskite thin-film transistors · China
Co-corresponding author of wafer-scale, vapour-deposited tin-perovskite p-channel transistors reported in Nature Electronics.
- Approximate age at the edition eligibility date
- 33
- Field
- Electronic materials
- Country or region
- China
- FigureAsia U35 Assessment
- 84.6 / 100
Profile
Career and documented record
Tin perovskites offer a lead-free route to high-mobility p-channel electronics, but instability and process incompatibility have limited scale. Huihui Zhu co-conceived and supervised a 2025 Nature Electronics study using industry-compatible vapour deposition to make tin-perovskite thin-film transistors across a 49-square-centimetre wafer.
The paper reported mobility of 33.8 cm²/Vs, an on/off ratio near 10^8 and 576 devices, with unencapsulated stability beyond 150 days under the stated conditions. These are not isolated-flake numbers; uniformity and device count are central to the claim.
The work remains short of a production line, but it shifts the discussion from whether tin perovskites can perform to whether they can be processed, arrayed and stabilised at useful scale.
FigureAsia selection
Why Huihui Zhu is on the list
Zhu is selected for combining competitive device physics with wafer-level evidence and a process aligned with manufacturing practice. The breadth of the demonstration gives the result more weight than a single record transistor.
Verified work
The 2025–26 record
Wafer-scale tin perovskite TFTs
Co-led vapour-deposited p-channel devices across a 49 cm² wafer.
576-device array
Reported 33.8 cm²/Vs mobility and an on/off ratio near 10^8 across the platform.
Unencapsulated stability
Measured operation beyond 150 days under the paper's storage and test conditions.
Field context
The work in its field
A p-channel semiconductor is valuable only if performance survives scale, patterning and time. Wafer-level arrays expose weaknesses that isolated devices can hide.
FigureAsia U35 Assessment
Assessment breakdown
84.6out of 100
Substantive 2025–2026 contribution
16.2 / 20
Co-led vapour-deposited p-channel devices across a 49 cm² wafer.
Verified scientific impact
12.1 / 15
The Nature Electronics study couples strong metrics with wafer area, device count and stability evidence.
Originality and distinction
8.6 / 10
The distinction lies in industry-compatible vapour deposition of high-performance lead-free perovskite p-channel arrays.
Field influence
8.3 / 10
Researchers in tin-perovskite thin-film transistors now have a stronger result to test, extend or challenge because of this contribution.
Individual agency
8.6 / 10
Zhu co-conceived, supervised and corresponding-authored the work, with fabrication and measurement shared across the team.
Durability and trajectory
4.4 / 5
The contribution builds on an active line of work at University of Electronic Science and Technology of China, with further tests and applications still to come.
Asian significance and global relevance
4.5 / 5
Chinese physicist leading electronic-materials research in Chengdu.
Evidential validity and reproducibility
7 / 8
Large device counts and stated stability tests support the result; production qualification is not claimed.
Advance in scientific knowledge
6.1 / 7
The study shows that tin-perovskite transistor performance can survive a substantially more scalable process regime.
Translational or methodological utility
4.4 / 5
The platform may support complementary circuits, sensors and flexible electronics if lifetime and integration continue to improve.
Responsible research stewardship
4.4 / 5
Lead-free chemistry is material, but life-cycle and manufacturing benefits are not assumed without further evidence.